Simulation of hydrogenated amorphous silicon: temperature dependence of nonequilibrium distribution functions for trap states

Nonequilibrium distribution functions (NDFs) for trap states in the mobility gap under photoillumination and zero bias voltage are derived by a constructed self-consistent drift–diffusion simulator consisting of Poisson equation current continuity equations hydrogenated amorphous silicon (a-Si:H). Regarding temperature dependence NDF, we find that values NDF decrease with increasing (negative dependence) energy region near conduction band p-type a-Si:H. This is reverse equilibrium (EDFs) gap. Furthermore, show this new physical characteristic can be applied explaining photoconductivity caused electron hopping tail The a-Si:H decreases temperature, which called thermal quenching (TQ). We TQ observed at low temperatures approximately 200 K explained model, having negative dependence.